tm december 2006 FDMS8670S n-channel powertrench ? syncfet tm ?2006 fairchild semiconductor corporation FDMS8670S rev.c1 www.fairchildsemi.com 1 FDMS8670S n-channel powertrench ? syncfet tm 30v, 42a, 3.5m features ? max r ds(on) = 3.5m at v gs = 10v, i d = 20a ? max r ds(on) = 5.0m at v gs = 4.5v, i d = 17a ? advanced package and silic on combination for low r ds(on) and high efficiency ? syncfet schottky body diode ? msl1 robust package design ? rohs compliant general description the FDMS8670S has been designed to minimize losses in power conversion application. advancements in both silicon and package technologies have been combined to offer the lowest r ds(on) while maintaining excellent sw itching performance. this device has the added benefit of an efficient monolithic schottky body diode. application ? synchronous rectifier for dc/dc converters ? notebook vcore/ gpu low side switch ? networking point of load low side switch ? telecom secondary side rectification mosfet maximum ratings t a = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 30 v v gs gate to source voltage 20 v i d drain current -continuous (package limited) t c = 25c 42 a -continuous (silicon limited) t c = 25c 116 -continuous t a = 25c 20 -pulsed 200 p d power dissipation t c = 25c 78 w power dissipation t a = 25c (note 1a) 2.5 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case 1.6 c/w r ja thermal resistance, junction to ambient (note 1a) 50 device marking device package reel size tape width quantity FDMS8670S FDMS8670S power 56 7?? 12mm 3000 units 4 3 2 1 5 6 7 8 g s s s pin 1 power 56 (bottom view) d d d d d d d d g g g s
FDMS8670S n-channel powertrench ? syncfet tm FDMS8670S rev.c1 www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = 1ma, v gs = 0v 30 v ' bv dss ' t j breakdown voltage temperature coefficient i d = 50ma, referenced to 25 c 17 mv/ c i dss zero gate voltage drain current v ds = 24v, v gs = 0v 500 p a i gss gate to source leakage current v gs = 20v, v ds = 0v 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 1ma 1 1.5 3 v ' v gs(th) ' t j gate to source threshold voltage temperature coefficient i d = 50ma, referenced to 25 c -2.8 mv/ c r ds(on) drain to source on resistance v gs = 10v, i d = 20a 2.8 3.5 m : v gs = 4.5v, i d = 17a 3.6 5.0 v gs = 10v, i d = 20a ,t j = 125 c 3.9 6.0 g fs forward transconductance v ds = 10v, i d = 20a 98 s c iss input capacitance v ds = 15v, v gs = 0v f = 1mhz 3005 4000 pf c oss output capacitance 865 1150 pf c rss reverse transfer capacitance 320 480 pf r g gate resistance f = 1mhz 1.4 5.0 : t d(on) turn-on delay time v dd = 15v, i d = 20a v gs = 10v, r gen = 5 : 14 26 ns t r rise time 19 35 ns t d(off) turn-off delay time 37 60 ns t f fall time 10 20 ns q g(tot) total gate charge at 10v v gs = 0v to 10v v ds = 15v i d = 20a 52 73 nc q g(4.5v) total gate charge at 4.5v v gs = 0v to 4.5v 24 34 nc q gs gate to source gate charge 8 nc q gd gate to drain ?miller? charge 10 nc v sd source to drain diode forward voltage v gs = 0v, i s = 2a 0.4 0.7 v t rr reverse recovery time i f = 20a, di/dt = 300a/ p s 26 42 ns q rr reverse recovery charge 24 39 nc notes: 1: r t ja is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r t jc is guaranteed by design while r t ca is determined by the user's board design. 2: pulse time < 300 p s, duty cycle < 2%. a. 50c/w when mounted on a 1 in 2 pad of 2 oz copper b. 125c/w when mounted on a minimum pad of 2 oz copper
FDMS8670S n-channel powertrench ? syncfet tm FDMS8670S rev.c1 www.fairchildsemi.com 3 typical characteristics t j = 25c unless otherwise noted figure 1. on region characteristics figure 2. n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n r e s i s t a n c e vs junction temperature figure 4. o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics figure 6. s o u r c e t o d r a i n d i o d e forward voltage vs source current 01234 0 30 60 90 120 150 180 v gs = 4v v gs = 4.5v v gs = 3v v gs = 3.5v v gs = 10v pulse duration = 80 p s duty cycle = 0.5%max i d , drain current (a) v ds , drain to source voltage (v) 0 30 60 90 120 150 180 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v gs = 3v v gs = 10v v gs = 4v v gs = 4.5v v gs = 3.5v pulse duration = 80 p s duty cycle = 0.5%max normalized drain to source on-resistance i d , drain current(a) -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i d = 20a v gs = 10v normalized drain to source on-resistance t j , junction temperature ( o c ) 345678910 2 4 6 8 10 pulse duration = 80 p s duty cycle = 0.5%max t j = 125 o c t j = 25 o c i d = 20a r ds(on) , drain to source on-resistance ( m : ) v gs , gate to source voltage (v) 1234 0 30 60 90 120 150 pulse duration = 80 p s duty cycle = 0.5%max t j = -55 o c t j = 25 o c t j = 125 o c i d , drain current (a) v gs , gate to source voltage (v) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 1e-3 0.01 0.1 1 10 t j = -55 o c t j = 25 o c t j = 125 o c v gs = 0v i s , reverse drain current (a) v sd , body diode forward voltage (v) 20
FDMS8670S n-channel powertrench ? syncfet tm FDMS8670S rev.c1 www.fairchildsemi.com 4 figure 7. gate charge characteristics figure 8. c a p a c i t a n c e v s d r a i n to source voltage figure 9. u n c l a m p e d i n d u c t i v e switching capability figure 10. m a x i m u m c o n t i n u o u s d r a i n current vs case temperature f i g u r e 1 1 . f o r w a r d b i a s s a f e operating area figure 12. s i n g l e p u l s e m a x i m u m power dissipation typical characteristics t j = 25c unless otherwise noted 0 102030405060 0 2 4 6 8 10 v dd = 20v v dd = 10v v gs , gate to source voltage(v) q g , gate charge(nc) v dd = 15v 0.1 1 10 100 1000 f = 1mhz v gs = 0v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss 5000 30 0.01 0.1 1 10 100 1000 1 10 t j = 25 o c t j = 125 o c t av , time in avalanche(ms) i as , avalanche current(a) 40 25 50 75 100 125 150 0 20 40 60 80 100 120 limited by package r t jc = 1.6 o c/w v gs = 4.5v v gs = 10v i d , drain current (a) t c , case temperature ( o c ) 0.1 1 10 1e-3 0.01 0.1 1 10 100 1s dc 10s 100ms 10ms 1ms 100us operation in this area may be limited by r ds(on) single pulse t j = max rated t a = 25 o c i d , drain current (a) v ds , drain to source voltage (v) 80 300 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1 10 100 v gs = 10v single pulse p ( pk ) , peak transient power (w) t, pulse width (s) 0.6 500 t a = 25 o c i = i 25 for temperatures above 25 o c derate peak current as follows: 150 t a ? 125 ----------------------- -
FDMS8670S n-channel powertrench ? syncfet tm FDMS8670S rev.c1 www.fairchildsemi.com 5 figure 13. transient thermal response curve typical characteristics t j = 25c unless otherwise noted 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1e-3 0.01 0.1 1 duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (s) d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a
FDMS8670S n-channel powertrench ? syncfet tm FDMS8670S rev.c1 www.fairchildsemi.com 6 syncfet schottky body diode characteristics fairchild?s syncfet process emb eds a schottky diode in parallel with powertrench mosfet. th is diode exhibits similar characteristics to a discrete exte rnal schottky diode in parallel with a mosfet. figure 14 shows the reverses recovery characteristic of the FDMS8670S. schottky barrier diodes exhibit significant leakage at high tem - perature and high reverse voltage. this will increase the power in the device. typical char acteristics (continued) figure 14. FDMS8670S syncfet body diode reverse recovery characteristics 0 5 10 15 20 25 30 1e-5 1e-4 1e-3 0.01 0.1 t j = 100 o c t j = 125 o c i dss , reverse leakage current (a) v ds , reverse voltage (v) t j = 25 o c figure 15. syncfet body diode reverse leakage vs drain to source voltage 0 5 10 15 20 25 30 1e-5 1e-4 1e-3 0.01 0.1 t a = 125 o c t a = 100 o c t a = 25 o c idss, reverse leakage current (a) vds, reverse voltage (v) 0 5 10 15 20 25 30 1e-5 1e-4 1e-3 0.01 0.1 t j = 100 o c t j = 125 o c t j = 25 o c v ds , reverse voltage (v) i dss , reverse leakage current (a) time: 12.5ns/div current: 0.8a/div
FDMS8670S n-channel powertrench ? syncfet tm FDMS8670S rev.c1 www.fairchildsemi.com 7
FDMS8670S rev. c1 www.fairchildsemi.com 8 FDMS8670S n-channel powertrench ? syncfet tm rev. i22 trademarks the following are registered and unregistered trademarks fairchil d semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume an y liability arising out of the application or use of any product or circuit described here in; neither does it convey any lice nse under its patent rights, nor the rights of others. these specifications do not expand th e terms of fairchild?s worldwide terms and conditions, specifically the warranty therei n, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to per form can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact ? fast ? fastr? fps? frfet? fact quiet series? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect ? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx ? msxpro ? ocx ? ocxpro ? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure ? rapidconnect ? serdes ? scalarpump ? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? tinyboost? tinybuck? tinypwm? tinypower? tinylogic ? tinyopto? trutranslation? uhc ? unifet? vcx? wire? across the board. around the world. ? the power franchise ? programmable active droop? datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. spec ifications may change in any manner without notice. preliminary first production this datas heet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datas heet contains final spec ifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only.
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